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  • The effect of an hexagonal boron nitride (hBN) layer close aligned with twisted bilayer graphene (TBG) is studied. At sufficiently low angles between twisted bilayer graphene and hBN, $/theta_{hBN} /lesssim 2^/circ$, the graphene electronic structure is strongly disturbed. The width of the low energy peak in the density of states changes from $W /sim 5 - 10$ meV for a decoupled system to $/sim 20 - 30$ meV. Spikes in the density of states due to van Hove singularities are smoothed out. We find that for a realistic combination of the twist angle in the TBG and the twist angle between the hBN and the graphene layer the system can be described using a single moir/'e unit cell.
subject
  • Nanomaterials
  • Monolayers
  • Geometry
  • Superhard materials
  • Boron compounds
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